Features & Benefits
AEC-Q101 qualified for automotive applications
650V GaN technology with TJ,max of 175oC
Best-in-class efficiency in both hard- and soft- switching topologies
Robust and easy drive – compatible with Si MOSFET gate drivers
Lowest VF in off-state reverse conduction for reduced loss during dead-times
In-package electrical isolation of 2.5kV minimum
Pin-to-pin compatible with Si/SiC MOSFET in a standard TO-247-3L package
Simplified system thermal management design and low Rth, JH

Applications
On-board chargers (OBC)
DC/DC converters
Industrial/Datacom PSU
PV inverters
Servo motor drives

Description
The G2E65R035TI-H is a fully automotive-qualified 650V, 35mΩ GaN FET in a TO-247Plus-3L package with electrically isolated Cu tab for easy thermal management and low Rth of junction-to heatsink. It is a hybrid normally-off device with the strongest gate and the lowest reverse voltage drop of all WBG devices in the market, offering simple gate drive, superior switching performance, and unmatched reliability. This TO-247Plus-3L package with high voltage isolation also provides pin-to-pin compatibility with TO-247-3L package for Si/SiC MOSFET in a common G-D-S pin function arrangement.