Wide bandgap (WBG) power semiconductors made from silicon carbide (SiC) and gallium nitride (GaN) are more and more deployed in applications like wind turbines, photovoltaic (PV) inverters, traction inverters for electric vehicles (EV), and EV fast chargers. Although these new semiconductors elevate the power density of these applications, they struggle with sufficient heat dissipation as power loss density also increases while chip sizes decrease.
TDK’s new smart aluminum nitride (AlN) multilayer substrate pushes the boundaries of these wide bandgap semiconductors in terms of power density, reliability, and compact size. It is the key to more efficient EVs, lighter and more compact PV inverters, or significantly higher output power in an existing footprint.
TDK develops and customizes specific AlN packages and substrates for all high-power applications. It is a solution provider for smart multilayer substrates, bringing design to mass production. Everything from a single source, manufactured in Europe. Tested, verified, and approved to the highest industry standards.