2024 World Electronics Achievement Awards / Power Integrations / InnoSwitch™3-EP PSU IC with 1250 V GaN switch
Power Integrations
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InnoSwitch™3-EP PSU IC with 1250 V GaN switch
Candidate for:2024 World Electronics Achievement Awards - Power Management/Voltage Converter
InnoSwitch™3-EP 1250 V ICs are the newest members of Power Integrations’ InnoSwitch family of off-line CV/CC QR flyback switcher ICs. The devices feature a 1250-volt PowiGaN™ GaN switch, positioning them as the world’s highest-voltage, single-switch gallium-nitride (GaN) power supply ICs. Other competitors have only released 750 V rated parts.
The switching losses for Power Integrations’ proprietary 1250 V PowiGaN technology are less than a third of that seen in equivalent silicon devices at the same voltage. This results in power conversion efficiency as high as 93 percent – enabling highly compact flyback power supplies that can deliver up to 85 W without a heatsink.
InnoSwitch™3-EP 1250 V ICs also feature synchronous rectification and FluxLink™ safety-isolated feedback circuitry.
The 1250 V rating of the InnoSwitch3-EP 1250 V ICs means that devices can be used in applications with an operating peak voltage of 1000 V, since 1250 V provides enough headroom to allow for industry-standard 80 percent de-rating. This is particularly valuable in challenging power grid environments where robustness is an essential defense against grid instability, surge and other power perturbations.
InnoSwitch™3-EP 1250 V ICs employ PowiGaN technology, which is Power Integrations’ internally developed GaN technology. PowiGaN switches replace the traditional silicon transistors on the primary side of PI’s highly integrated offline flyback switcher ICs, such as InnoSwitch3, reducing switching losses and enabling chargers, adapters and open frame power supplies that are more efficient, smaller and lighter than silicon alternatives.
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