The WeEn G2 Superjunction MOSFET features an improved epitaxial layer, reduced cell size, and a shortened superjunction depth, building on the success of our G1 products. This innovation significantly lowers the R(ON)sp to world-class levels without compromising parasitic parameters. Even under high current conditions, the RDS(ON) of the device remains stable.

Compared to products with similar R(ON)sp, the WeEn G2 Superjunction MOSFET offers significant advantages in reducing capacitive losses. Additionally, its integrated fast recovery body diode can withstand high commutation speeds of 1000A/µs, enabling excellent performance in both soft and hard switching applications. This MOSFET achieves a top-tier FOM factor with larger cell sizes than typically used in the industry, providing a significant cost advantage in manufacturing.

WeEn is committed to reliability testing that exceeds industry standards, earning the trust and affirmation of our customers. We are renowned for timely technical support, cost-effective solutions, and robust supply assurance, consistently