2024 World Electronics Achievement Awards / STMicroelectronics / ST Silicon Carbide TOLL SCT040TO65G3 for AI server power
STMicroelectronics
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ST Silicon Carbide TOLL SCT040TO65G3 for AI server power
Candidate for:2024 World Electronics Achievement Awards - Power Semiconductor/Driver
The silicon carbide MOS transistor SCT040TO65G3 (TOLL package) based on ST latest third-generation technology is the best choice to meet the explosive growth of the AI server market. This silicon carbide MOS transistor has extremely low conduction loss, excellent switching characteristics, strong robustness, and outstanding thermal dissipation capability. Once launched, it has been widely praised by customers for its excellent efficiency and stability.
All features
• Very fast and robust intrinsic body diode
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Kelvin Source pin for increased efficiency

Key benefits:
• Extremely low energy losses and low RON especially at very high Tj - Higher operating frequency for smaller and lighter systems
• Thermal performance
o High operating temperature (Tjmax = 175°C)
o Reduced cooling requirements & heat-sink
o Increased lifetime
• Easy to drive - Fully compatible with standard gate drivers
• Very fast and robust intrinsic body diode - More compact inverter
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