(1) Features:
1. Low Rds(on)
The cell pitch of the second generation 1200V 20mΩ SiC MOSFET is 37% smaller than that of the previous generation.
2. Drive voltage reduction, crosstalk improvement
Compared with the previous generation, the driving voltage of the second generation 1200V 20mΩ SiC MOSFET is reduced from -5 / + 20V to -3 / + 18V, while the crosstalk problem is improved.
3. Miller capacitance reduced by 70%;
4. The gate oxide field strength is reduced by 50% compared to the previous generation, and the device reliability is further improved.
(II) Specifications:
VDS = 1200V
ID@25°C = 126A
RDS (on) = 20mΩ
Qg=282nC
Coss=175pF
175 °C operating junction temperature
(III) Applications
The second generation NovuSiC ^® 1200V 20mΩ SiC MOSFET products have been tested and verified in industrial fields such as high-power 60kW charging pile module and 50kW energy storage converter.