This product adopts BYD Semiconductor's latest IGBT 6.0 technology, featuring deep submicron trench gate and composite field-stop layer technology. By overcoming the challenges of high aspect ratio and high-density trench processes, it achieves deep submicron-level cell design and processing, resulting in an extremely low saturation voltage drop, which is 25% lower than conventional products. The optimized composite field-stop layer provides ultra-soft switching characteristics under high current conditions. This product boasts ultra-high current density, minimal switching losses, and excellent robustness. It has been successfully mass-produced and applied to various models on BYD's flagship DM5.0 platform, contributing to a groundbreaking performance with a range exceeding 2000 km.