1. The EliteSiC M3S 650V MOSFET offers superior switching performance and lower device capacitances to achieve higher efficiency in data centers and energy storage systems. Compared to the previous generation, these new generation silicon carbide (SiC) MOSFETs have halved the gate charge and reduced both the energy stored in output capacitance (Eoss) and the output charge (Qoss) by 44%. With no tail current during turn-off and superior performance at high temperatures, they can also significantly reduce switching losses compared to super junction (SJ) MOSFETs. This allows customers to downsize system components while increasing the operating frequency, resulting in an overall reduction in system costs.2. Nine new EliteSiC Power Integrated Modules (PIMs) enable smaller, lighter fast charging platforms with bidirectional charging capabilities for DC ultra-fast electric vehicle (EV) chargers and energy storage systems (ESS). The silicon carbide-based solutions will dramatically improve system cost with higher efficiency and simpler cooling mechanisms that can reduce size by up to 40% and weight by up to 52% compared to traditional silicon-based IGBT solutions. With more compact, lighter charging platforms, designers will have all the key building blocks that are needed to quickly deploy a reliable, efficient and scalable network of DC fast chargers that can charge electric vehicle batteries up to 80% in as little as 15 minutes, addressing critical barriers to EV adoption. Key benefits: For each module, onsemi uses die from the same wafer to ensure more consistency and reliability; Uses the Gen3 M3S SiC MOSFET technology which offers the lowest switching losses and highest efficiency in the industry; Supports key topologies such as multi-level T-type neutral point clamp (TNPC), half-bridge and full-bridge topologies; Supports scalable output power from 25 kW to 100 kW, enabling multiple DC fast charging and energy storage systems platforms including bidirectional charging; Industry-standard F1 and F2 packages with the option of pre-applied Thermal Interface Material (TIM) and press fit pins; Enables optimal thermal management, avoiding system failure due to overheating; Full SiC modules offer energy conservation by minimizing power losses, directly translating to cost and energy savings; Offers more robustness and dependability, ensuring consistent operations.