AMSFAB offers high-performance and low-cost foundry services for GaN-on-Silicon devices from 40V to 650V with Au-free CMOS compatible process. The GaN-on-Silicon E-mode process platform uses the Au-free technology and features excellent advantages such as high breakdown voltage and high operating frequency. Moreover, this platform has many characteristics such as the minimum gate length of 0.5μm, P-GaN gate technology, W plug via, CMP, low RC and DRON.

Low-voltage (30V~40V) GaN-on-Silicon Power Device Platform
AMSFAB provides 6-inch 30V~40V GaN HEMT wafers. These products demonstrate characteristics such as ultra-low gate leakage, low ON-resistance, and smaller device area, enabling a wide range of power applications such as consumer electronics and charging protection.

Medium-voltage (100V~150V) GaN-on-Silicon Power Device Platform
AMSFAB provides 6-inch 100V~150V wafers with low gate charge, high switching frequency and low ON-resistance, which is widely used in industrial field such as adapters, motor drives, and power supplies.

High-voltage (650V) GaN-on-Silicon Power Device Platform
AMSFAB provides 6-inch 650V wafers with excellent advantages such as high breakdown voltage and high operating frequency. The products can be widely used in major industries, including fast charging, data center and automotive electronics.


Gallium Nitride on Silicon (GaN-on-Si) Epitaxy Platform for Power Applications
AMSFAB produces GaN-on-Si heterostructure epitaxy which is normally used and widely considered as a solution for cost reduction in compound semiconductor industry. However, the 6-inch high-quality GaN-on-Si epitaxy is very challenging due to significant lattice mismatch and differences in thermal expansion coefficients between gallium nitride and silicon.
AMSFAB has achieved high-quality performance for 6-inch GaN-on-Si epi-wafers through utilizing effective stress management and specially designed active layers. With outstanding performances such as cracking-free, low warping, high uniformity, good surface morphology and excellent reproducibility, the latest 6-inch GaN-on-Si epi-wafers (D/E-mode) from AMSFAB are capable to fully support 40V/150V/650V power applications. Moreover, a low vertical leakage is confirmed at both room temperature and high temperature (150℃).