2024 World Electronics Achievement Awards / WeEn Semiconductors Co.,Ltd
WeEn Semiconductors Co.,Ltd
Company Website
Candidate for: 2024 World Electronics Achievement Awards - Most Promising Third Generation Semiconductor Technology of the Year
WeEn Semiconductor introduces a range of top-side-cooling(TSC), surface-mount(SMD) SiC devices in packages including TSPAK and TOLT, both SiC Schottky diodes and SiC MOSFET has been planned.

Compared to traditional bottom-side-cooling SMD devices, the top-side-cooling package provides customers with a more flexible thermal dissipating solution, which can explore the performance potential of SiC devices to a greater extent. Based on the TSC package design, the heat can be transferred directly to the heatsink, without going through the thermal vias of the PCB, significantly reducing the thermal resistance of the junction to heatsink by about 17% ~ 19%, helping to improve the circuit performance or down-grading the power device spec to save the cost.

With eliminating the thermal vias or PCB heat dissipation copper area, the returning current can go just beneath the device, this will help to obtain a minimum current loop area and very low trace parasitic inductance, so that the switching loss and EMI radiation could be significantly minimized. This helps to shorten the product EMC debugging time and save the cost.

The TSC package not only offers thermal performance comparable with traditional through-hole-mount packages such as TO-247, but also has the advantages of an SMD device PCB assembly, manufacturing speed, stability and automation level will be improved.

WeEn provides a large portfolio of TSC parts, and both industrial and auto-grade products are available. The TSC package can be applied to various power conversion devices such as EV OBC, EVC modules, server power supply, photovoltaic inverter, etc., to help product design improve power density and cost saving.

The WeEn TOLT products offer 650V 20 to 70mΩ SiC MOSFETs and 10 to 20A SiC SBD.

The WeEn TSPAK products offer 650V~1200V, 12~150mΩ SiC MOSFETs and 10~40A SiC SBD.


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