Founded in Jan. 2020 and located in Lingang of the Shanghai Free Trade Zone, Advanced Micro Semiconductors Co., Ltd. (“AMSFAB”), features a gross floor area of 60,000 m2 in phase one campus. AMSFAB provides 3’’/4’’ InP and 6’’ GaAs/GaN foundry services for customers in various fields, supports products widely used in diverse applications including communication, automotive, new energy, consumer electronics, and industries, etc.
In the field of power electronics, AMSFAB offers GaN-On-Silicon process based on own Epi to provide GaN HEMT power devices foundry services. In the field of optoelectronics, AMSFAB provides a full range of optoelectronic process solutions from epitaxy to wafer manufacturing based on 4-inch/3-inch indium phosphide (InP) and 6-inch/4-inch advanced (GaAs) materials. Currently, it has cooperated with top customers in the domestic optoelectronics field.
AMSFAB offers one-stop solutions for customers ranging from epitaxial growth to wafer processing. Besides, AMSFAB also provides the value-added services include design support, MPW wafer services, mask services, wafer testing, failure analysis and etc. AMSFAB can help to shorten TTM (Time to Market) of products so as to bring more value to customers.
Advanced Micro Semiconductors Co., Ltd. (“AMSFAB”) offers high-performance and low-cost foundry services for silicon-based gallium nitride (“GaN-on-Silicon”) devices from 40V to 650V with Au-free CMOS compatible process. The platform of GaN-on-Silicon promotes the localization process of gallium nitride power devices and has made important contributions to the semiconductor industry. This is reflected in the following aspects:
1. Improve energy efficiency and system performance: With its high-frequency characteristics, GaN-on-Silicon power semiconductors are replacing traditional silicon-based design solutions, bringing smaller, lighter, and more energy-intensive fields to data centers, vehicles, and consumer electronics.
2. Promote the development of micro-vehicles: The application of GaN-on-Silicon makes the motor controllers of micro-vehicles such as electric bicycles and electric scooters smaller and lighter, improving energy conversion efficiency and reducing energy consumption, thus Extended cruising range.
3. Improve energy storage system efficiency: In household photovoltaic energy storage systems, GaN-on-Silicon can maintain high charge and discharge efficiency regardless of high or low power levels, enabling smaller and lighter energy storage system designs .
4. Accelerate the development of power tools and wireless charging technology: The application of GaN-on-Silicon will not only become the first choice for future power tools, but will also promote the popularization of wireless charging technology, solve power and distance limitations, speed up charging, and increase power Transmit power, improve operating efficiency, reduce the size of power devices, and reduce system costs.
In summary, GaN-on-Silicon power semiconductors have far-reaching significance for the semiconductor industry in terms of improving energy efficiency, promoting the application of new technologies, and promoting localization.