求是缘推荐：【培训通知】加拿大多伦多大学Prof.吳偉東讲授IGBTs和WBG功率器件的栅极驱动芯片

，时长02:49

日程安排

Power MOSFETs, IGBTs and wide bandgap (WBG) power devices are widely used in power electronic systems. As the Si-based power device technology is reaching its theoretical performance limit, more and more efforts have been placed on the gate driver design to further improve the device performance. Recent trends for smart gate driver ICs are to integrate a variety of complex functions to provide better protection, monitoring, and local control of the switching behaviour of the power devices. This course reviews the basic gate driving requirements and a few commercially available gate driver ICs. More importantly, in-depth studies on examples of recent smart integrated gate driver ICs will be offered. In particular, smart gate driver ICs with innovative integrated features such as indirect/non-intrusive collector current sensing, on-chip CPU for digital processing, dynamic gate driving strength for EMI suppression, short circuit protection, aging detection, etc. will be covered.

1.  Basic Gate Drive Requirements

This session begins with a review of basic gate drive requirements and the switching behavior of power MOSFETs, IGBTs, and wide bandgap (WBG) power devices such as SiC MOSFETs, and GaN HEMTs. The turn-on/off processes of a typical IGBTs will be examined with special attention on the Miller plateau, dv/dt, di/dt, and ringing oscillation. Several commercially available gate driver ICs will be used to illustrate the typical functionality and protection features. These includes gate current sourcing/sinking, external gate resistor, level shifting, dead-time control, and under voltage lockout (UVLO).

2.  Smart Gate Driver IC Design Examples

Recent trend in gate driver design includes many intelligent features such as on-chip CPU for dynamic control, flexible gate voltage levels, multi-stage driving speed for slew-rate control, precise timing control, current sensing capability for close-loop regulations, and active gate driving mode with continuous optimized dead-time. This session provides an introduction to various smart gate driver designs. The first topic focuses on IGBT gate drivers with indirect/non-intrusive collector current sensing. This is useful for both monitoring and protection of IGBTs. The second topic emphasizes the benefits of dynamic gate driving on suppressing EMI and enhancing power conversion efficiency. The final topic highlights the importance of precision timing and dead-time correction. This is especially critical for GaN and SiC power devices where the switching operation can be in the multi-MHz range, requiring pico-second resolution in the dead-time adjustment.

We expect that, after attending this short course, the audience will obtain a useful insight on basic gate driver requirements and gain exposure to future design trends in smart gate driver ICs.

第89期国际名家讲堂：

用于IGBTs和WBG功率器件的栅极驱动芯片

第108期国际名家讲堂：

智能功率集成电路及应用