IPAC英飞凌工业功率技术应用大会是一年一度的在线技术交流分享活动，过去每届连续3天、每天2小时的直播围绕着IGBT&SiC等功率半导体的特性与应用、电力电子技术的机遇与挑战等话题展开了激烈的讨论。今年， IPAC即将以全新的形式呈现，时间更灵活，话题更广泛，互动更频繁。活动将分为约10场线上直播技术交流+2场线下研讨会。
其中线上直播会按不同主题分为几个系列，目前即将开播的系列是：
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首播时间：2月16日 14:00-15:30
直播间：英飞凌官微
本期话题：IGBT模块内部芯片热耦合分析
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不知道大家有没有感觉到，有干货的论文都比较晦涩难读，如果又是英文的就更难懂了。而且有时读完了还有一些想法需要和作者深入讨论。在这个系列的直播中，波老师会邀请论文作者与读者朋友们直播互动，让作者亲自讲解自己论文的要点，并且还能现场回答您的提问。
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本次直播将解读与热耦合相关的两篇论文，以下是这两篇论文的摘要。
Abstract: Thermal modelling of IGBT power modules is often done by considering only the transient ther-mal impedance Zth of each chip individually, and mostly the thermal cross-coupling effects is ne-glected. This may cause inaccuracies in junction temperature calculations or lifetime estimations. In this paper an advanced thermal model is pro-posed, which can combine the self-heating effects and all cross-coupling effects together in one Zth matrix. And the basic description and extraction of the Zth matrix model characteristics by FEM (Fi-nite Element Method) simulation is introduced. Then the Zth matrix model is built-up in PLECS software, and verified by the FEM simulations on transient power profiles. Finally, the improve-ments of Tvj calculation with Zth matrix model for wind application is discussed and summarized.
Abstract: This paper introduces the concept of system-level IGBT thermal resistance, the IGBT thermal resistance matrix and the IGBT junction temperature calculation formula. It further describes an experimental method for investigating the thermal coupling effect between IGBT and diode chips within a high-power IGBT module. The system-level thermal resistance is obtained via a single-chip heating method within a half-bridge, high-power IGBT module. An additional method with dual-chip heating is then subsequently used to verify the effectiveness of the former method. In the end, the junction temperature of IGBT and diode chips with and without thermal coupling is analyzed and compared.
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