KIOXIA UFS 规格 | ||||||||
容量 | 产品型号 | UFS版本 | 最大速率(MB/s) | 电源电压 | 工作温度(℃) | 封装尺寸(mm) | ||
VCC(V) | VCCQ(V) | VCCQ2(V) | ||||||
32GB | THGAF8G8T23BAIL | 2.1 | 1160 | 2.7 至 3.6 | - (1) | 1.70 至 1.95 | -25 至 85 | 11.5x13.0x0.8 |
64GB | THGAF8G9T43BAIR | 11.5x13.0x1.0 | ||||||
128GB | THGJFAT0T44BAIL | 3.1 | 2320 | 2.4 至 2.7、 | 1.14 至 1.26 | - (2) | -25 至 85 | 11.5x13.0x0.8 |
256GB | THGJFAT1T84BAIR | 2.7 至 3.6 | 11.5x13.0x1.0 | |||||
256GB | THGJFGT1E45BAIP | 11.0x13.0x0.8 | ||||||
512GB | THGJFAT2T84BAIR | 11.5x13.0x1.0 | ||||||
512GB | THGJFGT2T85BAIU | 11.0x13.0x1.0 | ||||||
1TB | THGJFHT3TB4BAIG | 11.5x13.0x1.2 | ||||||
128GB | THGJFJT0E25BAIP | 4 | 4640 | 2.4 至 2.7 | 1.14 至 1.26 | - (2) | -25 至 85 | 11.0x13.0x0.8 |
256GB | THGJFJT1E45BATP | 11.0x13.0x0.8 | ||||||
512GB | THGJFJT2T85BAT0 | 11.0x13.0x0.95 | ||||||
KIOXIA 消费级 e-MMC 规格 | ||||||||
制程 | 产品型号 | 容量 | e-MMC 版本 | 最大数据速率(MB/s) | 电源电压 | 工作温度(℃) | 封装尺寸(mm) | |
VCC (V) | VCCQ (V) | |||||||
FG NAND | THGBMNG5D1LBAIT | 4GB | 5 | 400 | 2.7 至 3.6 | 1.70 至 1.95、 | -25 至 85 | 11.0x10.0x0.8 |
THGBMTG5D1LBAIL | 2.7 至 3.6 | 11.5x13.0x0.8 | ||||||
THGBMUG6C1LBAIL | 8GB | 5.1 | ||||||
THGBMUG7C1LBAIL | 16GB | |||||||
THGBMUG8C2LBAIL | 32GB | |||||||
BiCS | THGAMVG7T13BAIL | 16GB | 5.1 | 400 | 2.7 至 3.6 | 1.70 至 1.95 | -25 至 85 | 11.5x13.0x0.8 |
THGAMVG8T13BAIL | 32GB | |||||||
THGAMVG9T23BAIL | 64GB | |||||||
THGAMVT0T43BAIR | 128GB | 11.5x13.0x1.0 | ||||||
KIOXIA 工业级 e-MMC 规格 | ||||||||
制程 | 产品型号 | 容量 | e-MMC 版本 | 最大数据速率(MB/s) | 电源电压 | 工作温度(℃) | 封装尺寸(mm) | |
VCC (V) | VCCQ (V) | |||||||
FG NAND | THGBMJG6C1LBAU7 | 8GB | 5.1 | 400 | 2.7 至 3.6 | 1.70 至 1.95、 | -40 至 105 (1) | 11.5x13.0x1.0 |
THGBMJG7C2LBAU8 | 16GB | 2.7 至 3.6 | 11.5x13.0x1.2 | |||||
THGBMJG8C4LBAU8 | 32GB | |||||||
THGBMJG9C8LBAU8 | 64GB | |||||||
1. Tc=最高 115°C | ||||||||
KIOXIA 汽车 UFS 规格 | ||||||||
AEC-Q100 Grade 2 | ||||||||
容量 | 产品型号 | e-MMC版本 | 最大数据速率(MB/s) | 电源电压 | 工作温度(℃) | 封装尺寸(mm) | ||
VCC(V) | VCCQ(V) | |||||||
32GB | THGAFBG8T13BAB7(3) | 2.1 | 1160 | 2.7 至 3.6 | - (4) | 1.70 至 1.95 | -40 至 105 | 11.5x13.0x1.0 |
THGAFEG8T13BAB7 | ||||||||
64GB | THGAFBG9T23BAB8(3) | 11.5x13.0x1.2 | ||||||
THGAFEG9T23BAB8 | ||||||||
128GB | THGAFBT0T43BAB8(3) | |||||||
THGAFET0T43BAB8 | ||||||||
256GB | THGAFBT1T83BAB5(3) | 11.5x13.0x1.3 | ||||||
THGAFET1T83BAB5 | ||||||||
64GB | THGJFGG9T15BAB8 | 3.1 | 2320 | 2.4 至 2.7、 | 1.14 至 1.26 | - (5) | -40 至 105 | 11.5x13.0x1.2 |
128GB | THGJFGT0T25BAB8 | 2.7 至 3.6 | ||||||
256GB | THGJFGT1T45BAB8 | |||||||
512GB | THGJFGT2T85BAB5 | 11.5x13.0x1.3 | ||||||
AEC-Q100 Grade 3 | ||||||||
容量 | 产品型号 | e-MMC版本 | 最大数据速率(MB/s) | 电源电压 | 工作温度(℃) | 封装尺寸(mm) | ||
VCC(V) | VCCQ(V) | |||||||
64GB | THGJFGG9T15BAA8 | 3.1 | 2320 | 2.4 至 2.7、 | 1.14 至 1.26 | - (5) | -40 至 85 | 11.5x13.0x1.2 |
128GB | THGJFGT0T25BAA8 | 2.7 至 3.6 | ||||||
256GB | THGJFGT1T45BAA8 | |||||||
512GB | THGJFGT2T85BAA5 | 11.5x13.0x1.3 | ||||||
KIOXIA 车用 e-MMC 规格 | ||||||||
AEC-Q100 Grade2 | ||||||||
容量 | 产品型号 | e-MMC版本 | 最大数据速率(MB/s) | 电源电压 | 工作温度(℃) | 封装尺寸(mm) | ||
VCC(V) | VCCQ(V) | |||||||
8GB | THGBMJG6C1LBAC7 | 5.1 | 400 | 2.7 至 3.6 | 1.70 至 1.95、 | -40 至 105 | 11.5x13.0x1.0 | |
16GB | THGBMJG7C2LBAC8 | 2.7 至 3.6 | 11.5x13.0x1.2 | |||||
32GB | THGBMJG8C4LBAC8 | |||||||
64GB | THGBMJG9C8LBAC8 | |||||||
32GB | THGAMVG8T13BAB7 | 1.70 至 1.95 | 11.5x13.0x1.0 | |||||
64GB | THGAMVG9T23BAB8 | 11.5x13.0x1.2 | ||||||
128GB | THGAMVT0T43BAB8 | |||||||
256GB | THGAMVT1T83BAB5 | 11.5x13.0x1.3 | ||||||
AEC-Q100 Grade3 | ||||||||
容量 | 产品型号 | e-MMC版本 | 最大数据速率(MB/s) | 电源电压 | 工作温度(℃) | 封装尺寸(mm) | ||
VCC(V) | VCCQ(V) | |||||||
32GB | THGAMVG8T13BAA7 | 5.1 | 400 | 2.7 至 3.6 | 1.70 至 1.95 | -40 至 85 | 11.5x13.0x1.0 | |
64GB | THGAMVG9T23BAA8 | 11.5x13.0x1.2 | ||||||
128GB | THGAMVT0T43BAA8 | |||||||
256GB | THGAMVT1T83BAA5 | 11.5x13.0x1.3 | ||||||
1. Tc= 最高 115℃。 5. 本产品支持 VCC和 VCCQ 的双电源供电。无需提供 VCCQ2。 7. e-MMC 是根据 JEDEC e-MMC 标准规范构建的一类嵌入式内存产品的产品类别。 | ||||||||
KIOXIA XL-FLASH 规格 | ||||||||
容量 | 产品型号 | 技术 | 单元 | 工作温度 (°C) | 封装 | 状态 | ||
32GB | TH58LJG8SA4BA4C | BiCS FLASH™ | SLC | 0 至 70 | 132Ball BGA12x18mm | 量产 | ||
64GB | TH58LJG9SA4BA8C | |||||||
128GB | TH58LJT0SA4BA8H |
KIOXIA SLC NAND 闪存 | |||||||||
Part Number | Product Category | Tech. node(nm) | Capacity(bit) | VCC(V) | Page size(bit) | Block Size(bit) | OperatingTemperature(degC) | PackageName | Number of pins |
TC58BVG0S3HBAI4 | BENAND (Built-in ECC SLCNAND) | 24 | 1G | 2.7 to 3.6 | (2048+64)x8 | (128K+4K)x8 | -40 to 85 | FBGA | 63 |
TC58BVG0S3HBAI6 | BENAND (Built-in ECC SLCNAND) | 24 | 1G | 2.7 to 3.6 | (2048+64)x8 | (128K+4K)x8 | -40 to 85 | FBGA | 67 |
TC58BVG0S3HTA00 | BENAND (Built-in ECC SLCNAND) | 24 | 1G | 2.7 to 3.6 | (2048+64)x8 | (128K+4K)x8 | 0 to 70 | TSOP | 48 |
TC58BVG0S3HTAI0 | BENAND (Built-in ECC SLCNAND) | 24 | 1G | 2.7 to 3.6 | (2048+64)x8 | (128K+4K)x8 | -40 to 85 | TSOP | 48 |
TC58BVG1S3HBAI4 | BENAND (Built-in ECC SLCNAND) | 24 | 2G | 2.7 to 3.6 | (2048+64)x8 | (128K+4K)x8 | -40 to 85 | FBGA | 63 |
TC58BVG1S3HBAI6 | BENAND (Built-in ECC SLCNAND) | 24 | 2G | 2.7 to 3.6 | (2048+64)x8 | (128K+4K)x8 | -40 to 85 | FBGA | 67 |
TC58BVG1S3HTA00 | BENAND (Built-in ECC SLCNAND) | 24 | 2G | 2.7 to 3.6 | (2048+64)x8 | (128K+4K)x8 | 0 to 70 | TSOP | 48 |
TC58BVG1S3HTAI0 | BENAND (Built-in ECC SLCNAND) | 24 | 2G | 2.7 to 3.6 | (2048+64)x8 | (128K+4K)x8 | -40 to 85 | TSOP | 48 |
TC58BVG2S0HBAI4 | BENAND (Built-in ECC SLCNAND) | 24 | 4G | 2.7 to 3.6 | (4096+128)x8 | (256K+8K)x8 | -40 to 85 | FBGA | 63 |
TC58BVG2S0HBAI6 | BENAND (Built-in ECC SLCNAND) | 24 | 4G | 2.7 to 3.6 | (4096+128)x8 | (256K+8K)x8 | -40 to 85 | FBGA | 67 |
TC58BVG2S0HTA00 | BENAND (Built-in ECC SLCNAND) | 24 | 4G | 2.7 to 3.6 | (4096+128)x8 | (256K+8K)x8 | 0 to 70 | TSOP | 48 |
TC58BVG2S0HTAI0 | BENAND (Built-in ECC SLCNAND) | 24 | 4G | 2.7 to 3.6 | (4096+128)x8 | (256K+8K)x8 | -40 to 85 | TSOP | 48 |
TC58BYG0S3HBAI4 | BENAND (Built-in ECC SLCNAND) | 24 | 1G | 1.70 to 1.95 | (2048+64)x8 | (128K+4K)x8 | -40 to 85 | FBGA | 63 |
TC58BYG0S3HBAI6 | BENAND (Built-in ECC SLCNAND) | 24 | 1G | 1.70 to 1.95 | (2048+64)x8 | (128K+4K)x8 | -40 to 85 | FBGA | 67 |
TC58BYG1S3HBAI4 | BENAND (Built-in ECC SLCNAND) | 24 | 2G | 1.70 to 1.95 | (2048+64)x8 | (128K+4K)x8 | -40 to 85 | FBGA | 63 |
TC58BYG1S3HBAI6 | BENAND (Built-in ECC SLCNAND) | 24 | 2G | 1.70 to 1.95 | (2048+64)x8 | (128K+4K)x8 | -40 to 85 | FBGA | 67 |
TC58BYG2S0HBAI4 | BENAND (Built-in ECC SLCNAND) | 24 | 4G | 1.70 to 1.95 | (4096+128)x8 | (256K+8K)x8 | -40 to 85 | FBGA | 63 |
TC58BYG2S0HBAI6 | BENAND (Built-in ECC SLCNAND) | 24 | 4G | 1.70 to 1.95 | (4096+128)x8 | (256K+8K)x8 | -40 to 85 | FBGA | 67 |
TC58CVG0S3HRAIJ | Serial Interface NAND | 24 | 1G | 2.7 to 3.6 | (2048+64)x8 | (128K+4K)x8 | -40 to 85 | WSON8 | 8 |
TC58CVG1S3HRAIJ | Serial Interface NAND | 24 | 2G | 2.7 to 3.6 | (2048+64)x8 | (128K+4K)x8 | -40 to 85 | WSON8 | 8 |
TC58CVG2S0HRAIJ | Serial Interface NAND | 24 | 4G | 2.7 to 3.6 | (4096+128)x8 | (256K+8K)x8 | -40 to 85 | WSON8 | 8 |
TC58CYG0S3HRAIJ | Serial Interface NAND | 24 | 1G | 1.70 to 1.95 | (2048+64)x8 | (128K+4K)x8 | -40 to 85 | WSON8 | 8 |
TC58CYG1S3HRAIJ | Serial Interface NAND | 24 | 2G | 1.70 to 1.95 | (2048+64)x8 | (128K+4K)x8 | -40 to 85 | WSON8 | 8 |
TC58CYG2S0HRAIJ | Serial Interface NAND | 24 | 4G | 1.70 to 1.95 | (4096+128)x8 | (256K+8K)x8 | -40 to 85 | WSON8 | 8 |
TC58NVG0S3HBAI4 | SLC NAND | 24 | 1G | 2.7 to 3.6 | (2048+128)x8 | (128K+8K)x8 | -40 to 85 | FBGA | 63 |
TC58NVG0S3HBAI6 | SLC NAND | 24 | 1G | 2.7 to 3.6 | (2048+128)x8 | (128K+8K)x8 | -40 to 85 | FBGA | 67 |
TC58NVG0S3HTA00 | SLC NAND | 24 | 1G | 2.7 to 3.6 | (2048+128)x8 | (128K+8K)x8 | 0 to 70 | TSOP | 48 |
TC58NVG0S3HTAI0 | SLC NAND | 24 | 1G | 2.7 to 3.6 | (2048+128)x8 | (128K+8K)x8 | -40 to 85 | TSOP | 48 |
TC58NVG1S3HBAI4 | SLC NAND | 24 | 2G | 2.7 to 3.6 | (2048+128)x8 | (128K+8K)x8 | -40 to 85 | FBGA | 63 |
TC58NVG1S3HBAI6 | SLC NAND | 24 | 2G | 2.7 to 3.6 | (2048+128)x8 | (128K+8K)x8 | -40 to 85 | FBGA | 67 |
TC58NVG1S3HTA00 | SLC NAND | 24 | 2G | 2.7 to 3.6 | (2048+128)x8 | (128K+8K)x8 | 0 to 70 | TSOP | 48 |
TC58NVG1S3HTAI0 | SLC NAND | 24 | 2G | 2.7 to 3.6 | (2048+128)x8 | (128K+8K)x8 | -40 to 85 | TSOP | 48 |
TC58NVG2S0HBAI4 | SLC NAND | 24 | 4G | 2.7 to 3.6 | (4096+256)x8 | (256K+16K)x8 | -40 to 85 | FBGA | 63 |
TC58NVG2S0HBAI6 | SLC NAND | 24 | 4G | 2.7 to 3.6 | (4096+256)x8 | (256K+16K)x8 | -40 to 85 | FBGA | 67 |
TC58NVG2S0HTA00 | SLC NAND | 24 | 4G | 2.7 to 3.6 | (4096+256)x8 | (256K+16K)x8 | 0 to 70 | TSOP | 48 |
TC58NVG2S0HTAI0 | SLC NAND | 24 | 4G | 2.7 to 3.6 | (4096+256)x8 | (256K+16K)x8 | -40 to 85 | TSOP | 48 |
TC58NYG0S3HBAI4 | SLC NAND | 24 | 1G | 1.70 to 1.95 | (2048+128)x8 | (128K+8K)x8 | -40 to 85 | FBGA | 63 |
TC58NYG0S3HBAI6 | SLC NAND | 24 | 1G | 1.70 to 1.95 | (2048+128)x8 | (128K+8K)x8 | -40 to 85 | FBGA | 67 |
TC58NYG1S3HBAI4 | SLC NAND | 24 | 2G | 1.70 to 1.95 | (2048+128)x8 | (128K+8K)x8 | -40 to 85 | FBGA | 63 |
TC58NYG1S3HBAI6 | SLC NAND | 24 | 2G | 1.70 to 1.95 | (2048+128)x8 | (128K+8K)x8 | -40 to 85 | FBGA | 67 |
TC58NYG2S0HBAI4 | SLC NAND | 24 | 4G | 1.70 to 1.95 | (4096+256)x8 | (256K+16K)x8 | -40 to 85 | FBGA | 63 |
TC58NYG2S0HBAI6 | SLC NAND | 24 | 4G | 1.70 to 1.95 | (4096+256)x8 | (256K+16K)x8 | -40 to 85 | FBGA | 67 |
TH58BVG3S0HBAI4 | BENAND (Built-in ECC SLCNAND) | 24 | 8G(4Gx2) | 2.7 to 3.6 | (4096+128)x8 | (256K+8K)x8 | -40 to 85 | FBGA | 63 |
TH58BVG3S0HBAI6 | BENAND (Built-in ECC SLCNAND) | 24 | 8G(4Gx2) | 2.7 to 3.6 | (4096+128)x8 | (256K+8K)x8 | -40 to 85 | FBGA | 67 |
TH58BVG3S0HTA00 | BENAND (Built-in ECC SLCNAND) | 24 | 8G(4Gx2) | 2.7 to 3.6 | (4096+128)x8 | (256K+8K)x8 | 0 to 70 | TSOP | 48 |
TH58BVG3S0HTAI0 | BENAND (Built-in ECC SLCNAND) | 24 | 8G(4Gx2) | 2.7 to 3.6 | (4096+128)x8 | (256K+8K)x8 | -40 to 85 | TSOP | 48 |
TH58BYG3S0HBAI4 | BENAND (Built-in ECC SLCNAND) | 24 | 8G(4Gx2) | 1.70 to 1.95 | (4096+128)x8 | (256K+8K)x8 | -40 to 85 | FBGA | 63 |
TH58BYG3S0HBAI6 | BENAND (Built-in ECC SLCNAND) | 24 | 8G(4Gx2) | 1.70 to 1.95 | (4096+128)x8 | (256K+8K)x8 | -40 to 85 | FBGA | 67 |
TH58CVG3S0HRAIJ | Serial Interface NAND | 24 | 8G(4Gx2) | 2.7 to 3.6 | (4096+128)x8 | (256K+8K)x8 | -40 to 85 | WSON8 | 8 |
TH58CYG3S0HRAIJ | Serial Interface NAND | 24 | 8G(4Gx2) | 1.70 to 1.95 | (4096+128)x8 | (256K+8K)x8 | -40 to 85 | WSON8 | 8 |
TH58NVG3S0HBAI4 | SLC NAND | 24 | 8G(4Gx2) | 2.7 to 3.6 | (4096+256)x8 | (256K+16K)x8 | -40 to 85 | FBGA | 63 |
TH58NVG3S0HBAI6 | SLC NAND | 24 | 8G(4Gx2) | 2.7 to 3.6 | (4096+256)x8 | (256K+16K)x8 | -40 to 85 | FBGA | 67 |
TH58NVG3S0HTA00 | SLC NAND | 24 | 8G(4Gx2) | 2.7 to 3.6 | (4096+256)x8 | (256K+16K)x8 | 0 to 70 | TSOP | 48 |
TH58NVG3S0HTAI0 | SLC NAND | 24 | 8G(4Gx2) | 2.7 to 3.6 | (4096+256)x8 | (256K+16K)x8 | -40 to 85 | TSOP | 48 |
TH58NVG4S0HTA20 | SLC NAND | 24 | 16G(4Gx4) | 2.7 to 3.6 | (4096+256)x8 | (256K+16K)x8 | 0 to 70 | TSOP | 48 |
TH58NVG4S0HTAK0 | SLC NAND | 24 | 16G(4Gx4) | 2.7 to 3.6 | (4096+256)x8 | (256K+16K)x8 | -40 to 85 | TSOP | 48 |
TH58NYG3S0HBAI4 | SLC NAND | 24 | 8G(4Gx2) | 1.70 to 1.95 | (4096+256)x8 | (256K+16K)x8 | -40 to 85 | FBGA | 63 |
TH58NYG3S0HBAI6 | SLC NAND | 24 | 8G(4Gx2) | 1.70 to 1.95 | (4096+256)x8 | (256K+16K)x8 | -40 to 85 | FBGA | 67 |
以上请参考,如需Excel电子档请添加微信:benny0078 获取
一文看懂NAND、eMMC、UFS、eMCP、uMCP、DDR、LPDDR及存储器和内存区别
三星内存eMCP、UMCP、eMMC、LPDDR、DDR型号参数对照表
专业存储行业交流丨诚邀各位精英加入
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