IMEC成功制造基于硅衬底的GaN功率器件

欧洲研究机构IMEC及其合作伙伴在一项关于GaN制造的研发计划中，在8寸硅晶圆上生长出了器件质量级的GaN/AlGaN层。

这些首个基于8寸晶圆的GaN器件，对高效8寸晶圆厂生产具有成本效益的功率器件具有重要的里程碑意义。

基于GaN的金属绝缘层半导体HEMT(MIS-HEMT，High electron mobility transistor)在制作时使用了应用材料公司生产的先进的MOCVD设备，不过大部分生产设备均是采用标准的CMOS制造设备。

传统功率器件的欧姆接触和栅极采用金材料，但它使GaN工艺与传统的CMOS工艺不兼容。为了解决这个问题，IMEC在制作GaN HEMT的欧姆接触时，采用的是非金材料，同时将HEMT的肖特基栅极改为非金MIS栅极。非金MIS栅极不仅可以避免采用特殊工艺，同时还降低了传统HEMT器件的高漏电流问题。

基于兼容CMOS工艺8寸硅衬底的GaN功率器件

编译：Aileen Zhu

点击参考原文：IMEC makes GaN-on-silicon

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IMEC makes GaN-on-silicon

Peter Clarke

European research institute IMEC and its partners in a program on gallium-nitride fabrication have produced device quality GaN/AlGaN layers on 200-mm silicon wafers.

These first GaN devices on 200-mm diameter wafers are an important milestone on the path to cost-effective production of power devices in high-productivity 200-mm fabs.

Functional GaN MIS-HEMTs were processed using an advanced MOCVD system from Applied Materials but in general with standard CMOS tools.

Conventionally, gold is used for ohmic contacts and gate structures in power devices, but it makes GaN processing incompatible with conventional CMOS processing. To overcome this, imec based the ohmic contact formation on an Au-free metallization system, and modified the Schottky gate to a gate dielectric based gold-free metal-insulator-semiconductor (MIS) structure. This introduction of the MISHEMT structure had the added advantage of reducing the high leakage current of conventional HEMTs.

Power devices on 200-mm CMOS-compatible GaN-on-Si.

编译：Aileen Zhu