UBM最新拆解：神秘手机惊现PCM(图)

非易失性相变内存(phase-change memory，PCM)已经悄悄现身在手机产品中？根据工程顾问机构UBM TechInsights的一份拆解分析报告，发现在某款神秘手机中，有一颗由三星电子(Samsung Electronics)出品的多芯片封装(multi-chip package，MCP)内存，内含与NOR闪存兼容的非易失性相变内存芯片。

TechInsights拆解的手机产品，基于客户机密不透露型号与厂牌；该机构表示，要等到与客户之间的工作告一段落，才能公布该手机到底是哪一款。三星曾于4月时透露，该公司将在第二季出货一款内含512Mbit非易失性相变内存芯片的MCP；当时三星并未透露该产品将采用哪种制程技术，仅表示该产品“相当于40纳米NOR闪存。”

业界认为三星将采用65纳米至60纳米制程生产上述内存；而拆解分析报告以显微镜所量测出的半间距(half-pitch)内存长度(如下图)，是每微米(micron)8个记忆单元(cell)，就证实了以上的猜测。

三星512Mbit相变化RAM的横切面

现在已经被美光(Mciron)合并的恒忆(Numonyx)，在2008年发表了一款90纳米制程128Mbit非易失性相变内存，并在2010年4月以Omneo系列串行/并列存取内存问世；但是到目前为止，该公司都未透露任何有关该产品的设计案或是量产计划。此外恒忆也开发了一款45纳米制程的1Gbit非易失性相变内存，但这款原本预期今年上市的产品，迄今也未有后续消息。

点击进入第二页：PRAM是否真能接班成为新一代内存

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UBM TechInsights已经确认，三星的512Mbit相变化RAM(PRAM)芯片，商标号码为KPS1N15EZA，与一颗128Mbit UtRAM芯片以MCP形式封装在一起，并应用于手机产品中。该款三星的PRAM芯片由4层铝互连层与内存元素所组成，顶部与底部的电极(electrode contacts)是装置在铝金属与硅基板之间。

内含PCM的MCP内存外观

“最近业界对非易失性相变内存技术的微缩极限有争议，再加上恒忆的产品延迟量产，让人质疑PRAM是否真能接班成为新一代内存；”UBM TechInsights资深顾问Young Choi表示：“对非易失性相变内存已经应用在手机的发现，清楚表明了产品设计工程师已经开始使用这种具潜力的技术。”

包含非易失性相变内存MCP的手机主板拆解图

点击进入参考原文：Update: PCM found in handset, by Peter Clarke

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Update: PCM found in handset

Peter Clarke

Engineering consultancy UBM TechInsights has announced it has found a phase-change memory die inside a multi-chip package inside a mobile handset.

TechInsights (Ottawa, Ontario), part of the same group that publishes EE Times, has found a NOR flash memory compatible phase-change RAM, from Samsung Electronics Co. Ltd. in a mobile handset but declined to reveal the model of handset citing reasons of customer confidentiality. "We will be able to reveal it in the near future once our work with this client is done," a spokesman for UBM TechInsights said.

Samsung had said in April 2010 it would be shipping a multi-chip package memory, including a 512-Mbit phase-change memory die in the second quarter of 2010 (see Samsung to ship MCP with phase-change). At the time Samsung was not clear about the process technology in use describing it as "equivalent to 40-nm-class NOR flash memory." The process is thought to be at about 65- to 60-nm minimum dimensions. The half-pitch memory distance shown in the microphotograph below (8 cells per micron) bears this out.

Numonyx, now Micron Technologies Inc., released a 90-nm 128-Mbit phase-change memory in 2008, which it formalized as the Omneo range of serial and parallel access memories in April 2010. But the company has not said anything about design wins or volume production. Numonyx has been developing a 1-Gbit phase-change memory in a 45-nm process, but there has been no news of sampling or volume production for a device that was expected to appear early in 2010.

UBM TechInsights has confirmed the commercial availability of a 512-Mbit PRAM die, labeled KPS1N15EZA, and packaged with a Samsung 128Mbit UtRAM die in a multi-chip package in a mobile phone. The Samsung PRAM die is comprised of four aluminum interconnect layers with the memory elements and the top and bottom electrode contacts built between the aluminum metal 1 and the silicon substrate.

"Recent debate on the scaling limitation of phase change memory technologies, combined with production delays from Numonyx, had left many wondering if PRAM would ever realize its promise as a next-generation memory," said Young Choi, senior consultant for professional services at UBM TechInsights, in a statement. "The discovery of this product in a mobile application is a clear sign that designers are now open to using this promising technology."